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- 光電二極管(PIN) 新勢(shì)力光電供應(yīng)光電二極管(PIN)，用于將光信號(hào)轉(zhuǎn)換為電信號(hào)，形成光電效應(yīng)/光電池。PIN 光電二極管應(yīng)用廣泛，包括： 安檢設(shè)備、激光測(cè)距、運(yùn)動(dòng)控制、分析儀器、生物醫(yī)療、光通信、軍事、航空航天。UV/blue sensitive photodiodesType No.Active areaDark currentRise timeChipPackageSizeArea5V410nm 5V 50Ωmmmm2nAnsPS1-2TO521.0x1.010.0150PS1-2LCC6.11.0x1.010.0150PC5-2TO5Ø 2.5250.3150PS7-2TO52.66x2.6670.4200PC10-2TO5Ø 3.57101300PS13-2TO53.5x3.5131300PS33-2TO85.7x5.7332600PC50-2BNCØ 7.985051000PS100-2BNC10x10100102000PS100-2CERpin10x10100102000Band pass filter modules: PC10-2 TO5i with center wavelength 254nm or 300nm or 350nmBlue/green sensitive photodiodesType No.Active areaDark currentRise timeChipPackageSizeArea5V410nm 5V 50Ωmmmm2nAnsPC1-6bTO52S3Ø 1.1310.0510PC5-6bTO5Ø 2.5250.120PS7-6bTO52.7x2.770.1525PC10-6bTO5Ø 3.57100.245PS13-6bTO53.5x3.5130.2550PS33-6bTO85.7x5.7330.6140PS100-6bCERpin10x101001200PS100-6bLCC10S10x101001200Band pass filter modules: PR20-6b TO5i with center wavelength 488nm or 550nm or 633nm or 680nmHigh speed photodiodes (for fast rise times at low reverse voltages)Type No.Active areaDark currentRise timeChipPackageSizeArea20V850nm 20V 50Ωmmmm2nAnsPS0.25-5LCC6.10.5x0.50.250.10.4PS0.25-5TO52S30.5x0.50.250.10.4PC0.55-5TO52S1Ø 0.840.550.21PC0.55-5LCC6.1Ø 0.840.550.21PS1-5LCC6.11.0x1.010.21.5PS1-5TO52S31.0x1.010.21.5PS7-5TO52.7x2.770.52PS11.9-5TO53.45x3.4511.913PC20-5TO8Ø 5.052023.5PS33-5TO85.7x5.73323.5PS100-5CERpinS10x1010025PS100-5LCC10S10x1010025High speed photodiodes for low voltages (for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components)Type No.Active areaDark currentRise timeChipPackageSizeArea20V850nm 20V 50Ωmmmm2nAnsPS0.25-5tLCC6.10.5x0.50.2510.4PC0.55-5tLCC6.1Ø 0.840.5551PC0.55-5tT1 3/4Ø 0.840.5551PC0.55-5tT1 3/4 blackØ 0.840.5551PS1-5tLCC6.11.0x1.0111IR photodiodes with min. dark current (for low-capacitance light detection as well as for α, β, ϒ and X-radiation detection)Type No.Active areaDark currentRise timeChipPackageSizeArea10V850nm 10V 50Ωmmmm2nAnsPC1-6TO52S1Ø 1.1310.0510PC1-6TO52S3Ø 1.1310.0510PC5-6TO5Ø 2.5250.113PS7-6TO52.66×2.6670.115PC10-6TO5Ø 3.57100.220PS13-6TO53.5×3.5130.220PC20-6TO8Ø 5.05200.325PC50-6TO8SØ 7.98500.530PS100-6BNC10×101000.850PS100-6CERpinS10×101000.850PS100-6LCC10S10×101000.850IR photodiodes with fully depletable (very low capacitance levels)Type No.Active areaDark currentRise timeChipPackageSizeArea10V905nm 10V 50Ωmmmm2nAnsPC5-7TO8iØ 2.5250.0545PC10-7TO8iØ 3.57100.150PC20-7TO8SiØ 5.05200.250PS100-7LCC1010×101001.550QP100-7LCC1010×104×250.550Photodiodes for 1064nm (specifically for laser rangefinders, laser-based targeting systems or any applications using YAG lasers or similar NIR radiation sources)Type No.Active areaDark currentRise timeChipPackageSizeArea150V1064nm 150V 50Ωmmmm2nAnsQP22-QTO8SØ 5.34×5.71.55QP45-QTO8S6.7×6.74×10.9635QP154-QTO1032iØ 14.04×38.5106PIN SeriesOptimized forSpecial featuresApplicationSeries-2200-500 nmUV / Blue enhancedAnalytical instruments, readout for scintillatorsSeries-6b400-650 nmBlue / Green enhancedPhotometric illuminometerSeries-5b360-550 nmHigh-speed Epitaxy, blue / green enhancedOptical fiber communication, high speed photometrySeries-5t400-850 nmHigh-speed Epitaxy, low voltage (3.5V)Series-5450-950 nmHigh-speed EpitaxySeries-6700-950 nmGeneral purpose, low dark current, fast responsePrecision photometry, analytical instrumentsSeries-7700-1100 nmLow capacity, full depletableHigh energy physicsSeries-Q900-1100 nmEnhanced NIR sensitivity, low voltage, full depletableYAG laser detectionSeries-i600-1700 nmInGaAs photodiodes, high IR sensitivity, low dark currentEye-sate laser detectionSeries-XIonizing radiationWith or without scintillator, ultraMedical, security, materialwww.NewOpto.com相關(guān)商品 光電管放大器 雪崩二極管(APD) Semrock濾光片 紫外LED
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